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HCS241MS
September 1995
Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW
AE AI1 BO4 AI2 BO3 AI3 BO2 AI4 1 2 3 4 5 6 7 8 9 20 VCC 19 BE 18 AO1 17 BI4 16 AO2 15 BI3 14 AO3 13 BI2 12 AO4 11 BI1
Features
* 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse * Latch Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels - VIL = 30% VCC Max - VIH = 70% VCC Min * Input Compatibility Levels Ii 5A at VOL, VOH
BO1
GND 10
20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH C TOP VIEW
AE AI1 BO4 AI2 BO3 AI3 BO2 AI4 BO1 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC BE AO1 BI4 AO2 BI3 AO3 BI2 AO4 BI1
Description
The Intersil HCS241MS is a Radiation Hardened inverting octal three-state buffer/line driver with two output enables, one active low, and one active high. The HCS241MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS241MS is supplied in a 20 lead ceramic flatpack (K suffix) or a SBDIP package (D suffix).
Ordering Information
PART NUMBER HCS241DMSR HCS241KMSR HCS241D/Sample HCS241K/Sample HCS241HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 20 Lead SBDIP 20 Lead Ceramic Flatpack 20 Lead SBDIP 20 Lead Ceramic Flatpack Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
302
518838 3122.1
HCS241MS Functional Diagram
AO1 18 AO2 16 AO3 14 AO4 12 BO1 9 BO2 7 BO3 5 BO4 3
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
1 AE 2 AI1 4 AI2 6 AI3 8 AI4 11 BI1 13 BI2 15 BI3 17 BI4
19 BE
TRUTH TABLE INPUTS AE L L H H = High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance AIn L H X OUTPUT AOn L H Z BE L H H INPUTS BIn X L H OUTPUT BOn Z L H
Spec Number 303
518838
Specifications HCS241MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .35mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 (Note 2) VCC = VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0 (Note 2) VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A VCC = 5.5V, VIH = 3.85V, VIL = 1.35V, IOH = -50A Input Leakage Current IIN VCC = 5.5V VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 -7.2 -6.0 MAX 40 750 0.1 V mA mA UNITS A
PARAMETER Supply Current
SYMBOL ICC
CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Source)
IOH
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC0.1 VCC0.1 -
-
V
1, 2, 3
0.5 5.0 1.0 50 -
V A
1 2, 3
Three-State Output Leakage Current
IOZ
VCC = 5.5V, Force Voltage = 0V or VCC
1 2, 3
A
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V (Note 3)
7, 8A, 8B
-
1. All voltages referenced to device GND. 2. Force/Measure function may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 304
518838
Specifications HCS241MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Propagation Delay TPHL1 VCC = 4.5V, VIH = 4.5V, VIL = 0V 9 10, 11 Propagation Delay TPZL1 TPZL2 VCC = 4.5V, VIH = 4.5V, VIL = 0 9 10, 11 Propagation Delay TPLZ1 TPLZ2 VCC = 4.5V, VIH = 4.5V, VIL = 0 9 10, 11 Propagation Delay TPZH1 TPZH2 VCC = 4.5V, VIH = 4.5V, VIL = 0 9 10, 11 Propagation Delay TPHZ1 TPHZ2 VCC = 4.5V, VIH = 4.5V, VIL = 0 9 10, 11 NOTES: 1. All voltage referenced to GND. 2. Measurements made with CL = 50pF, RL = 500, Input TR = TF = 3ns LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 2 2 2 2 2 2 MAX 21 25 21 25 25 30 25 30 20 24 25 30 ns ns ns ns ns UNITS ns
PARAMETER Propagation Delay
SYMBOL TPLH1
(NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 4.5V, VIL = 0V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz NOTE 1 1 Input Capacitance CIN VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz 1 1 Output Capacitance COUT VCC = 5V, VIH = 5V, VIL = 0V, f = 1MHz 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 36 59 10 10 20 20 UNITS pF pF pF pF pF pF
Spec Number 305
518838
Specifications HCS241MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS TEMPERATURE +25oC +25oC +25oC +25oC MIN 6 -6 +25oC VCC0.1 VCC0.1 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC 2 2 2 2 2 2 MAX 0.75 0.1 0.1 50 5 25 25 30 30 24 30 UNITS mA mA mA V V V V A A ns ns ns ns ns ns
PARAMETER Supply Current Output Current (Sink) Output Current (Source) Output Voltage Low
SYMBOL ICC IOL IOH VOL
(NOTES 1, 2) CONDITIONS VIN = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 VCC = VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0 VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A
Three-State Output Leakage Current Input Leakage Current Noise Immunity Functional Propagation Delay
IOZ IIN FN TPLH1 TPHL1 TPZL1 TPZL2 TPLZ1 TPLZ2 TPZH1 TPZH2 TPHZ1 TPHZ2
VCC = 5.5V, Force Voltage = 0V or VCC VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIL = 3.15V, VIH = 1.35V, (Note 2) VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V
NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5
PARAMETER ICC IOL/IOH IOZ
DELTA LIMIT +12A -15% of 0 Hour 200nA
Spec Number 306
518838
Specifications HCS241MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H, IOZL/H READ AND RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 1, 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 20 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 10 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 1) NOTES: 1. Each pin except VCC and GND will have a series resistor of 10K 5%. 2. Each pin except VCC and GND will have a series resistor of 680 5% 1, 10 3, 5, 7, 9, 12, 14, 16, 18 19, 20 2, 4, 6, 8, 11, 13, 15, 17 -
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3, 5, 7, 9, 12, 14, 16, 18 GROUND 10 VCC = 5V 0.5V 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20
NOTE: Each pin except VCC and GND will have a series resistor of 47K 5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
Spec Number 307
518838
HCS241MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 308
518838
HCS241MS Propagation Delay Timing Diagram and Load Circuit
VIH VS VSS TPLH TPHL VOH VS VOL OUTPUT INPUT DUT CL RL TEST POINT CL = 50pF RL = 500
AC VOLTAGE LEVELS PARAMETER VCC VIH VIL VS GND ACTS 4.50 4.50 0.0 2.25 0.00 UNITS V V V V V
Three-State High Timing Diagram and Load Circuit
DUT VIH VS VSS TPZH TPHZ VOH VT VOZ OUTPUT VW INPUT CL RL TEST POINT CL = 50pF RL = 500
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND ACTS 4.50 4.50 2.25 2.25 3.60 0.00 UNITS V V V V V V
Three-State Low Timing Diagram and Load Circuit
VCC VIH VS VSS TPZL TPLZ VOZ VT VOL OUTPUT VW INPUT DUT CL RL TEST POINT CL = 50pF RL = 500
THREE-STATE LOW VOLTAGE LEVELS 1 VCC VIH VS VT VW GND 8 4.50 4.50 2.25 2.25 0.90 0.00 UNITS V V V V V V
Spec Number 309
518838
HCS241MS Die Characteristics
DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness:13kA 2.6kA WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCS241MS
(20) VCC
(19) BE
(3)BO4
(2) AI1
(1) AE
(18) AO1
AI2 (4) (17) BI4 BO3 (5)
(16) AO2 AI3 (6) (15) BI3
BO2 (7) (14) AO3
AI4 (8)
GND (10)
AO4 (12)
BI2 (13)
BI1 (11)
BO1 (9)
Spec Number 310
518838

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